Infineon IRF7493TRPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRF7493TRPBF | 7,523 | 1 | Tape & Reel | 1d | ||||||||
| IRF7493TRPBF | 20,000 | 4K | 5d | |||||||||
| IRF7493TRPBF | 52,000 | 4K | 23h | |||||||||
| IRF7493TRPBF | 3,745 | 1 | Cut Tape | 23h | ||||||||
| TMOSP11961 | 20,000 | 4K | 1d |
Technical Specifications
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.3 A
Current Rating9.3 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.51 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance15 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max15 mΩ
Resistance15 MΩ
Rise Time7.5 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time8.3 ns
Voltage Rating (DC)80 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
3 month trend: +12.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7493TRPBF.
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Descriptions
Descriptions of Infineon IRF7493TRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
Single N-Channel 80 V 15 mOhm 53 nC HEXFET® Power Mosfet - SOIC-8
MOSFET N-CH 80V 9.3A 8-SOIC / Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:9.2A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
MOSFET, N-CH, 80V, 9.3A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +12.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.3 A
Current Rating9.3 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.51 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance15 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max15 mΩ
Resistance15 MΩ
Rise Time7.5 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time8.3 ns
Voltage Rating (DC)80 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm