Infineon IRF7470TRPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRF7470TRPBF | 16,140 | 1 | Tape & Reel | 1h | ||||||||
| IRF7470TRPBF | 2,640 | 20h | ||||||||||
| 40M7961 | 347 | 1 | 4d | |||||||||
| IRF7470TRPBF | 6,795 | 12 | 1h | |||||||||
| IRF7470TRPBF | 6,795 | 1 | Cut Tape | 1h |
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)10 A
Current Rating11 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time3.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.43 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance13 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13 mΩ
Resistance13 MΩ
Rise Time1.9 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time21 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)40 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
3 month trend: +6.14%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7470TRPBF.
Related Parts
Infineon IRF7470PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V
Infineon IRF7468PBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 11.7 Milliohms;ID 9.4A;SO-8;PD 2.5W;VGS +/-1
onsemi FDS8447
Transistor, Single, N-channel, PowerTrench MOSFET, 40V, 12.8A, SOIC8 | ON Semiconductor FDS8447
Descriptions
Descriptions of Infineon IRF7470TRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V
Single N-Channel 40V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
N CHANNEL MOSFET, 40V, 10A, SOIC; TRANSI; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R / MOSFET N-CH 40V 10A 8-SOIC
Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO ;RoHS Compliant: Yes
MOSFET, N-CH, 40V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 12 / Fall Time ns = 3.2 / Rise Time ns = 1.9 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +6.14%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)10 A
Current Rating11 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time3.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.43 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance13 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max13 mΩ
Resistance13 MΩ
Rise Time1.9 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time21 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)40 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements