Infineon IRF7416TRPBF

Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.02 Ohm; Id -10A; SO-8; Pd 2.5W; Vgs +/-20V; -55
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-10 A
Current Rating-10 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-20 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max20 mΩ
Resistance20 mΩ
Rise Time49 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-20 V
Turn-Off Delay Time59 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7416TRPBF.

element14 APAC
Datasheet9 pages12 years ago
Datasheet9 pages18 years ago
Farnell
Datasheet9 pages18 years ago
TME
Datasheet9 pages12 years ago
iiiC
Datasheet9 pages12 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages18 years ago

Inventory History

3 month trend:
-0.25%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF7416TRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRF7416TRPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
Single P-Channel 30 V 0.035 Ohm 92 nC HEXFET® Power Mosfet - SOIC-8
30V 10A 20m¦¸@10V,5.6A 2.5W 2.04V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-10A; On Resistance, Rds(on):0.02ohm; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Current, Idm pulse:45A ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, 30V, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:30V; Current, Id Cont:10A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:45A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:F7416; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds:30V; Voltage, Vds Max:30V; Width, External:4.05mm

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF7416TRPBF.
  • IRF7416TRPBF..
  • SP001554262

Technical Specifications

Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-10 A
Current Rating-10 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-20 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max20 mΩ
Resistance20 mΩ
Rise Time49 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-20 V
Turn-Off Delay Time59 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7416TRPBF.

element14 APAC
Datasheet9 pages12 years ago
Datasheet9 pages18 years ago
Farnell
Datasheet9 pages18 years ago
TME
Datasheet9 pages12 years ago
iiiC
Datasheet9 pages12 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago