Infineon IRF7413ZTRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 8 Milliohms; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.21 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance10 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time6.3 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time8.7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7413ZTRPBF.

element14 APAC
Datasheet10 pages15 years ago
Farnell
Datasheet10 pages18 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages15 years ago
iiiC
Datasheet10 pages15 years ago
DigiKey
Datasheet10 pages17 years ago

Inventory History

3 month trend:
+40.39%

Alternate Parts

Price @ 1000
$ 0.343
$ 0.53
$ 0.53
Stock
945,356
886,595
886,595
Authorized Distributors
16
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
13 A
13 A
13 A
Threshold Voltage
1.8 V
3 V
3 V
Rds On Max
10 mΩ
11 mΩ
11 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.21 nF
1.8 nF
1.8 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF7413ZTRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRF7413ZTRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET® Power Mosfet - SOIC-8
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Avnet Japan
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 3.8 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 8.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF7413ZTRPBF.
  • SP001555342

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.21 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance10 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time6.3 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time8.7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7413ZTRPBF.

element14 APAC
Datasheet10 pages15 years ago
Farnell
Datasheet10 pages18 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages15 years ago
iiiC
Datasheet10 pages15 years ago
DigiKey
Datasheet10 pages17 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago