Infineon IRF7343PBF

Transistor MOSFET N P Channel 55 Volt 4.7 Amp-3.4 Amp 8 Pin SOIC
Obsolete

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)4.7 A
Current Rating4.7 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements2
On-State Resistance50 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time10 ns
Threshold Voltage1 V
Turn-Off Delay Time43 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7343PBF.

Datasheet10 pages19 years ago
TME
Datasheet10 pages18 years ago
Jameco
Datasheet11 pages15 years ago
RS (Formerly Allied Electronics)
Datasheet10 pages16 years ago
iiiC
Datasheet10 pages19 years ago

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF7343PBF.

Related Parts

Descriptions

Descriptions of Infineon IRF7343PBF provided by its distributors.

Transistor MOSFET N P Channel 55 Volt 4.7 Amp-3.4 Amp 8 Pin SOIC
Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC Tube
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Transistor MOSFET N+P-Ch. 4,7+3,4A/55V SO8
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:4.7A; Cont Current Id P Channel:3.4A; Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:50mohm; On State Resistance P Channel Max:105mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:38A; Pulse Current Idm N Channel 2:38A; Pulse Current Idm P Channel:27A; Row Pitch:6.3mm; SMD Marking:F7343; Termination Type:SMD; Voltage Vds:2V; Voltage Vds N Channel 1:55V; Voltage Vds Typ:55V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF 7343 PBF
  • IRF7343 PBF
  • IRF7343PBF.
  • SP001571976

Technical Specifications

Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)4.7 A
Current Rating4.7 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements2
On-State Resistance50 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time10 ns
Threshold Voltage1 V
Turn-Off Delay Time43 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF7343PBF.

Datasheet10 pages19 years ago
TME
Datasheet10 pages18 years ago
Jameco
Datasheet11 pages15 years ago
RS (Formerly Allied Electronics)
Datasheet10 pages16 years ago
iiiC
Datasheet10 pages19 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago