Infineon IRF7324TRPBF
Production
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-9 A
Current Rating-9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time190 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.94 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance18 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time170 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
3 month trend: -2.56%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7324TRPBF.
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Descriptions
Descriptions of Infineon IRF7324TRPBF provided by its distributors.
Transistor MOSFET Array Dual P-CH 20V 9A 8-Pin SOIC T/R
Avnet Japan
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Dual P-Channel MOSFET
Dual P-Channel 20 V 0.026 Ohm 63 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-9A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:12V; Drain Source On Resistance @ 10V:26mohm RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -2.56%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-9 A
Current Rating-9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time190 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.94 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance18 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time170 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements