Infineon IRF7313TRPBF
Production
In StockTechnical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance29 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time8.9 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
3 month trend: +138%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7313TRPBF.
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Descriptions
Descriptions of Infineon IRF7313TRPBF provided by its distributors.
Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.029Ohm;ID 6.5A;SO-8;PD 2W;VGS +/-20V
MOSFET 2N-CH 30V 6.5A 8-SOIC / Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
DUAL N CHANNEL MOSFET, 30V, 6.5A; Transi; DUAL N CHANNEL MOSFET, 30V, 6.5A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.023ohm; Rds(on) Test Voltage Vgs:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +138%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance29 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time8.9 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements