International Rectifier IRF6609

A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with lo...

Datasheet Manufacturer Page

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IRF6609 144 ··
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IRF6609 0 ··
USD
0.960 0.960 0.960 0.960 0.960
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Non-Authorized Dealers

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Descriptions

A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
International Rectifier

Technical Specifications

Breakdown Voltage (Drain to Source) 20 V
Power Dissipation 89 W
RoHS Compliant
Polarity N-Channel
Current Rating 31 A
Part Family IRF6609
Voltage Rating (DC) 20 V
Packaging Cut Tape (CT)
Rise Time 95 ns
Continuous Drain Current (Ids) 150 A
Lead-Free Status Lead Free
Drain to Source Voltage (Vds) 20 V
Drain to Source Resistance (on) (Rds) 1.6 Ω
Lifecycle Status Active
Mounting Type Surface Mount

Documents

International Rectifier
Datasheet 11 pages 11 years ago
Newark
Datasheet 10 pages 11 years ago
Digi-Key
Datasheet 2 pages 11 years ago
iiiC
Datasheet 11 pages
Compliance Statements
Reach Statement 6 pages 2 years ago
Rohs Statement 1 page 2 years ago

Images

Alternate Names

I&R IRF6609
IRF IRF6609
IOR IRF6609
INT'L RECTIFIER IRF6609
RECT IRF6609
OMNIREL IRF6609
INT RECTIFIER IRF6609
SEMCOR IRF6609
INTERNATIONAL RECTIFIER CORP IRF6609
INTERNATIONAL RECTIF IRF6609
INT RECT IRF6609
INTERNATIO IRF6609
INTLRECT IRF6609
INTERNATIONA IRF6609
INTERNATIONAL MICROCIRCUITS IRF6609
INTERNATIONAL R IRF6609
International Rectifier (IR) IRF6609
InternationRectifer IRF6609
INTER RECTIFIER IRF6609
INTERNATI IRF6609
INTERNATIONAL RECTIFIER SE IRF6609
INTERNATIONAL RECT IRF6609
IRC IRF6609
INTER REC IRF6609
INTL REC IRF6609
IR IRF6609
International Rect. IRF6609

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