Infineon IRF540NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)33 A
Current Rating27 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance44 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation130 W
Rds On Max44 mΩ
Recovery Time170 ns
Resistance44 MΩ
Rise Time35 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF540NPBF.

Newark
Datasheet9 pages20 years ago
Datasheet9 pages23 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages23 years ago
Datasheet3 pages20 years ago
Datasheet8 pages23 years ago
DigiKey
Datasheet8 pages20 years ago
Jameco
Datasheet10 pages15 years ago
iiiC
Datasheet9 pages23 years ago
Datasheet9 pages20 years ago
Farnell
Datasheet11 pages18 years ago
Sierra IC
Datasheet10 pages22 years ago
B+D Enterprises
Datasheet8 pages25 years ago

Inventory History

3 month trend:
+29.74%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF540NPBF.

Related Parts

Descriptions

Descriptions of Infineon IRF540NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
Transistor NPN Mos IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220
Halfin
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF
Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
N CHANNEL, MOSFET, 100V, 33A, TO-220AB;; TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A;
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
100V 33A RDSON 44mOHM TO- 220AB IR IRF540N Interna tional Rectifier Descrip tion: MOSFET; N-Channel; 100 V (Min.); 33 A (Max.) ; 130 W (Max.); 11 ns (Ty p.)
N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF540NPBF.
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF 540 N PBF
  • IRF 540N
  • IRF 540NPBF
  • IRF-540N
  • IRF540 N
  • IRF540N
  • IRF540N PBF
  • IRF540N.
  • IRF540NPBF.
  • IRF540NPBF....
  • SP001561906

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)33 A
Current Rating27 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance44 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation130 W
Rds On Max44 mΩ
Recovery Time170 ns
Resistance44 MΩ
Rise Time35 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF540NPBF.

Newark
Datasheet9 pages20 years ago
Datasheet9 pages23 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages23 years ago
Datasheet3 pages20 years ago
Datasheet8 pages23 years ago
DigiKey
Datasheet8 pages20 years ago
Jameco
Datasheet10 pages15 years ago
iiiC
Datasheet9 pages23 years ago
Datasheet9 pages20 years ago
Farnell
Datasheet11 pages18 years ago
Sierra IC
Datasheet10 pages22 years ago
B+D Enterprises
Datasheet8 pages25 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago