Infineon IRF5305STRLPBF
Production
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time66 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Inventory History
3 month trend: +174%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF5305STRLPBF.
Related Parts
InfineonIRF5305SPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
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N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
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N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK
Descriptions
Descriptions of Infineon IRF5305STRLPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
MOSFET P-CH 55V 31A D2PAK / Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single P-Channel 55V 0.06 Ohm 63 nC HEXFET® Power Mosfet - D2PAK
P CHANNEL MOSFET, -55V, 31A, D2-PAK; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A;
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P Channel Mosfet, -55V, 31A, D2-Pak; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF5305STRLPBF.
MOSFET, P-CH, -55V, -31A, TO-263-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +174%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time66 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements