Vishay IRF520PBF
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)9.2 A
Current Rating9.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Nominal Vgs10 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation60 W
Rds On Max270 mΩ
Recovery Time260 ns
Resistance270 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time8.8 ns
Voltage Rating (DC)100 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Inventory History
3 month trend: -2.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay IRF520PBF.
Newark
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Farnell
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LKR
TME
iiiC
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Engineering Resources
View Evaluation kits and Reference designs for Vishay IRF520PBF.
Related Parts
InfineonIRF520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
VishayIRF9520PBF
Transistor: P-MOSFET; unipolar; -100V; -6.8A; 0.6ohm; 60W; -55+175 deg.C; THT; TO220
VishayIRF510PBF
Single N-Channel 100 V 0.54 Ohms Flange Mount Power Mosfet - TO-220-3
Descriptions
Descriptions of Vishay IRF520PBF provided by its distributors.
Transistor: N-MOSFET; unipolar; 100V; 9.2A; 0.2ohm; 45W; -55+175 deg.C; THT; TO220
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 100V 9.2A TO-220AB
100V 9.2A 270m´Î@10V5.5A 60W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Junction to Case Thermal Resistance A:2.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -2.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)9.2 A
Current Rating9.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Nominal Vgs10 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation60 W
Rds On Max270 mΩ
Recovery Time260 ns
Resistance270 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time8.8 ns
Voltage Rating (DC)100 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for Vishay IRF520PBF.
Newark
element14 APAC
Farnell
Upverter
LKR
TME
iiiC
Jameco
Future Electronics
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements