Infineon IRF3710ZSTRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; D2PAK; Pd 160W; Vgs +/-20
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity800
Power Dissipation160 W
Rds On Max18 mΩ
Resistance18 MΩ
Rise Time77 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time17 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF3710ZSTRLPBF.

Newark
Datasheet12 pages13 years ago
Datasheet13 pages20 years ago
Datasheet13 pages19 years ago
iiiC
Datasheet12 pages13 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages20 years ago

Inventory History

3 month trend:
+0.62%

Alternate Parts

Price @ 1000
$ 0.888
$ 1.91
$ 2.07
Stock
585,232
238,774
41,967
Authorized Distributors
14
1
5
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
59 A
59 A
59 A
Threshold Voltage
-
2 V
-
Rds On Max
18 mΩ
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
160 W
160 W
160 W
Input Capacitance
2.9 nF
2.9 nF
2.9 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF3710ZSTRLPBF.

Related Parts

Descriptions

Descriptions of Infineon IRF3710ZSTRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;D2Pak;PD 160W;VGS +/-20
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (A
MOSFET, N-CH, 59A, 100V, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF3710ZSTRLPBF.

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF3710ZSTRLPBF.
  • SP001570170

Technical Specifications

Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity800
Power Dissipation160 W
Rds On Max18 mΩ
Resistance18 MΩ
Rise Time77 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time17 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF3710ZSTRLPBF.

Newark
Datasheet12 pages13 years ago
Datasheet13 pages20 years ago
Datasheet13 pages19 years ago
iiiC
Datasheet12 pages13 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages20 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago