Infineon IRF3708PBF
NRND
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70018201 | 0 | 1 | Bulk | 1d | ||||||||
| IRF3708PBF | 12,334 | 2d | ||||||||||
| 604294-IRF3708 | 2,300 | 6 | 3d | |||||||||
| IRF3708PBF | 188,855 | 7 | Tape & Reel | 1d | ||||||||
| IRF3708PBF | 11,492 | 2d |
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)62 A
Current Rating62 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time3.7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.417 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation87 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance12 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation87 W
Rds On Max12 mΩ
Recovery Time65 ns
Resistance12 MΩ
Rise Time50 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time17.6 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)30 V
Dimensions
Height8.763 mm
Length10.5156 mm
Width4.69 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF3708PBF.
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Descriptions
Descriptions of Infineon IRF3708PBF provided by its distributors.
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 30 V 29 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 87 W
MOSFET, 30V, 62A, 12 MOHM, 24 NC QG, TO-220AB
HEXFET POWER MOSFET Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:87W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:62A; Junction to Case Thermal Resistance A:1.73°C/W; Package / Case:TO-220AB; Power Dissipation Pd:87W; Power Dissipation Pd:87W; Pulse Current Idm:248A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)62 A
Current Rating62 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time3.7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.417 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation87 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance12 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation87 W
Rds On Max12 mΩ
Recovery Time65 ns
Resistance12 MΩ
Rise Time50 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time17.6 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)30 V
Dimensions
Height8.763 mm
Length10.5156 mm
Width4.69 mm
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements