Infineon IRF3205PBF
Production
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)110 A
Current Rating110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.247 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation150 W
Rds On Max8 mΩ
Recovery Time104 ns
Resistance8 mΩ
Rise Time101 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm
Inventory History
3 month trend: +8.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.655
$ 1.795
Stock
5,016,360
476,511
Authorized Distributors
19
8
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
110 A
75 A
Threshold Voltage
4 V
2 V
Rds On Max
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
200 W
Input Capacitance
3.247 nF
3.247 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF3205PBF.
Related Parts
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Descriptions
Descriptions of Infineon IRF3205PBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S
Transistor MOSFET N Channel 55 Volt 110 Amp 3 Pin 3+ Tab TO-220 AB
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 110 A, TO-220, IRF3205PBF
Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 110A/55V TO220 IRF 3205 PBF
55V 110A 8m´Î@10V62A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 55V, 110A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3205PBF.
MOSFET, N, 55V, 98A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 110A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 1°C/W; Lead Spacing: 2.54mm; No. of Transistors: 1; On State resistance @ Vgs = 10V: 8mohm; Operating Temperature Min: -55°C; Pin Format: 1 g; 2 d/tab; 3 s; Pulse Current Idm: 390A; Termination Type: Through Hole; Voltage Vds Typ: 55V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +8.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)110 A
Current Rating110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.247 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation150 W
Rds On Max8 mΩ
Recovery Time104 ns
Resistance8 mΩ
Rise Time101 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.54 mm
Width4.69 mm
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements