Infineon IRF1405STRLPBF
Production
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRF1405STRLPBF | 14,475 | 1 | Tape & Reel | 3d | ||||||||
| IRF1405STRLPBF | 5,600 | 800 | 5d | |||||||||
| IRF1405STRLPBF | 285 | 1 | Cut Tape | 1d | ||||||||
| IRF1405STRLPBF | 7,200 | 800 | 23h | |||||||||
| IRF1405STRLPBFCT-ND | 2,735 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)131 A
Current Rating131 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.48 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max5.3 mΩ
Rise Time190 ns
Schedule B8541290080
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Inventory History
3 month trend: +5.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF1405STRLPBF.
Related Parts
InfineonIRF2805STRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRF1405SPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2
InfineonIRF2805SPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Descriptions
Descriptions of Infineon IRF1405STRLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2
Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH Si 55V 131A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 131A D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
IRF1405STRLPBF,MOSFET, 55V, 13 1A, 5.3 MOHM, 170 NC QG, D2-P
MOSFET, N-CH, 55V, 131A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:131A; Source Voltage Vds:55V; On Resistance
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:200W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF1405STRLPBF.
MOSFET, N-CH, 55V, 131A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 131A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 200W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 131 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 190 / Turn-OFF Delay Time ns = 130 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +5.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)131 A
Current Rating131 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.48 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max5.3 mΩ
Rise Time190 ns
Schedule B8541290080
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements