Infineon IR2301PBF

Tube IR2301PBF High-Side or Low-Side 1996 gate driver 130ns 150C 200mA 350mA 1W
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDIP
MountThrough Hole
Number of Pins8
Technical
Ambient Temperature Range High150 °C
Channel TypeIndependent
Fall Time50 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current350 mA
Max Power Dissipation1 W
Max Supply Current190 µA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage5 V
Nominal Supply Current120 µA
Number of Channels2
Number of Drivers2
Number of Outputs2
Output Current200 mA
Output Voltage620 V
Package Quantity3000
PackagingBulk
Power Dissipation1 W
Propagation Delay220 ns
Rise Time130 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time50 ns
Dimensions
Height5.33 mm
Length10.8966 mm
Width7.11 mm

Documents

Download datasheets and manufacturer documentation for Infineon IR2301PBF.

SHENGYU ELECTRONICS
Datasheet18 pages19 years ago
iiiC
Datasheet18 pages19 years ago
DigiKey
Datasheet18 pages19 years ago
Newark
Datasheet23 pages20 years ago

Inventory History

3 month trend:
-0.75%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IR2301PBF.

Related Parts

Descriptions

Descriptions of Infineon IR2301PBF provided by its distributors.

Tube IR2301PBF High-Side or Low-Side 1996 gate driver 130ns 150C 200mA 350mA 1W
600 V high-side and low-side gate driver IC, PDIP8, RoHS
Infineon SCT
Driver 600V 0.35A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube
High and Low Side Driver, SoftTurn-On, Noninverting Inputs in a 8-Lead package
Through Hole Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 600V V 8-DIP (0.300, 7.62mm) IR2301 High-Side or Low-Side
MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-40°C to +150°C; Delay Matching:50ns; Fall Time, tf:50ns ;RoHS Compliant: Yes
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage dV/dt immune; Gate drive supply range from 5 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V input logic compatible; Matched propagation delay for both channels; Logic and power ground +/- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
The IR2106(4)(S) are high voltage,high speed power MOSFET and IGBT drivers with independent highand low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
DRIVER, MOSFET, HIGH/LOW SIDE, 2301; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:350mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:5V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +150°C; SVHC:No SVHC (19-Dec-2011); Base Number:2301; IC Generic Number:2301; Logic Function Number:2301; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:150°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current + Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:5V; Termination Type:Through Hole; Voltage Vcc Max:25V; Voltage Vcc Min:10V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IR2301
  • SP001547732

Technical Specifications

Physical
Case/PackageDIP
MountThrough Hole
Number of Pins8
Technical
Ambient Temperature Range High150 °C
Channel TypeIndependent
Fall Time50 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current350 mA
Max Power Dissipation1 W
Max Supply Current190 µA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage5 V
Nominal Supply Current120 µA
Number of Channels2
Number of Drivers2
Number of Outputs2
Output Current200 mA
Output Voltage620 V
Package Quantity3000
PackagingBulk
Power Dissipation1 W
Propagation Delay220 ns
Rise Time130 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time50 ns
Dimensions
Height5.33 mm
Length10.8966 mm
Width7.11 mm

Documents

Download datasheets and manufacturer documentation for Infineon IR2301PBF.

SHENGYU ELECTRONICS
Datasheet18 pages19 years ago
iiiC
Datasheet18 pages19 years ago
DigiKey
Datasheet18 pages19 years ago
Newark
Datasheet23 pages20 years ago

Compliance

Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago