600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHS
Infineon SCT
MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Delay Matching:60ns; Fall Time, tf:50ns ;RoHS Compliant: Yes
DRIVER, MOSFET, HIGH/LOW SIDE, 2108; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:350mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2108; IC Generic Number:2108; Logic Function Number:2108; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current + Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Voltage Vcc Max:25V; Voltage Vcc Min:10V
600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High side output in phase with HIN input; Low side output out of phase with LIN input; Logic and power ground + /- 5 V offset; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity