DRIVER, MOSFET/IGBT HALF BRIDGE, SMD; Device Type:MOSFET; Module Configuration:Half Bridge; Peak Output Current:360mA; Input Delay:680ns; Output Delay:150ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2104; IC Generic Number:2104; Logic Function Number:2104; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:150°C; Operating Temperature Min:-55°C; Output Current:210mA; Output Sink Current Min:270mA; Output Source Current Min:130mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:150ns; Turn On Time:680ns
600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Internal set deadtime; High side output in phase with HIN input; Shut down input turns off both channels; Matched propagation delay for both channels