Infineon IPZ60R017C7XKSA1

Trans MOSFET N-CH 600V 109A 4-Pin(4+Tab) TO-247 Tube
Production

Technical Specifications

Technical
Continuous Drain Current (ID)109 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance17 mΩ
Package Quantity240
Power Dissipation446 W
Schedule B8541290080
Turn-Off Delay Time106 ns
Turn-On Delay Time30 ns
Dimensions
Height25.22 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPZ60R017C7XKSA1.

TME
Datasheet14 pages0 years ago

Inventory History

3 month trend:
-0.49%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPZ60R017C7XKSA1.

Descriptions

Descriptions of Infineon IPZ60R017C7XKSA1 provided by its distributors.

Trans MOSFET N-CH 600V 109A 4-Pin(4+Tab) TO-247 Tube
Transistor Polarity:n Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:109A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Msl:- Rohs Compliant: Yes
MOSFET, N-CH, 600V, 109A, 446W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 109A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 446W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPZ60R017C7
  • IPZ60R017C7XKSA1.
  • SP001369912

Technical Specifications

Technical
Continuous Drain Current (ID)109 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance17 mΩ
Package Quantity240
Power Dissipation446 W
Schedule B8541290080
Turn-Off Delay Time106 ns
Turn-On Delay Time30 ns
Dimensions
Height25.22 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPZ60R017C7XKSA1.

TME
Datasheet14 pages0 years ago

Compliance

Environmental Classification
RoHSNon-Compliant
Compliance Statements