Infineon IPT111N20NFDATMA1

Trans MOSFET N-CH 200V 96A Automotive 9-Pin(8+Tab) HSOF T/R
Production

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Technical Specifications

Physical
MountSurface Mount
Technical
Continuous Drain Current (ID)96 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.3 nF
Max Dual Supply Voltage200 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Manufacturer Package IdentifierPG-HSOF-8
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance11.1 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation375 W
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time13 ns
Dimensions
Height2.4 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPT111N20NFDATMA1.

Farnell
Datasheet10 pages0 years ago

Inventory History

3 month trend:
-53.86%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPT111N20NFDATMA1.

Related Parts

Descriptions

Descriptions of Infineon IPT111N20NFDATMA1 provided by its distributors.

Trans MOSFET N-CH 200V 96A Automotive 9-Pin(8+Tab) HSOF T/R
Mosfet, N Ch, 200V, 96A, Hsof-8; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:96A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IPT111N20NFDATMA1
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom, PG-HSOF-8, RoHS
Infineon SCT
The new TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. | Summary of Features: Industrys lowest R DS(on); Highest current capability up to 300A; Very low package parasitics and inductances | Benefits: Less paralleling and cooling required; Highest system reliability; System cost reduction; Enabling very compact design | Target Applications: Forklift; Light electric vehicles (LEV) e.g. e-scooter, e-bikes or -car; Point-of-load (POL); Telecom; efuse

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Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPT111N20NFD
  • SP001340384

Technical Specifications

Physical
MountSurface Mount
Technical
Continuous Drain Current (ID)96 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)200 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.3 nF
Max Dual Supply Voltage200 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Manufacturer Package IdentifierPG-HSOF-8
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance11.1 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation375 W
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time13 ns
Dimensions
Height2.4 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPT111N20NFDATMA1.

Farnell
Datasheet10 pages0 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
RoHSNon-Compliant
Compliance Statements