Infineon IPT015N10N5ATMA1

Infineon Technologies N channel OptiMOS5 power transistor, 100 V, 300 A, HSOF, IPT015N10N5ATMA1

Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS™ Power Mosfet - HSOF-8-1

Trans MOSFET N-CH 100V 300A Automotive 9-Pin(8+Tab) HSOF T/R

MOSFET, N-CH, 100V, 300A, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Source Voltage Vds:100V; On Resistance

Mosfet, N-Ch, 100V, 300A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:300A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPT015N10N5ATMA1

MOSFET, N-CH, 100V, 300A, HSOF; Transistor Polarity: N Channel; Continuous Drain Current Id: 300A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: HSOF; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter