Infineon IPP60R099P6XKSA1

Name: Infineon IPP60R099P6XKSA1
Brand: Infineon
SKU: IPP60R099P6XKSA1
Price: 5.94 USD
Availability: InStock

Single N-Channel 600 V 99 mOhm 70 nC CoolMOS Power Mosfet - TO-220-3

Production

Manufacturer Page Datasheet

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser	2	726-IPP60R099P6	498	1	Tube	5.940	4.990	4.040	3.070	2.890	2d
Rochester Electronics		IPP60R099P6XKSA1	228			3.240	3.240	3.050	2.750	2.750	16h
Verical		IPP60R099P6XKSA1	2,000	5			5.150	4.288	3.538	3.525	1d
Newark		12AC9729	980	1		6.720	5.730	4.040	4.030	4.030	13h
Future Electronics	2	4064724	500	50	Tube			2.150	2.150	2.150	1d

Technical Specifications

Physical

Case/PackageTO-220

MountThrough Hole

Number of Pins3

Technical

Continuous Drain Current (ID)37.9 A

Drain to Source Breakdown Voltage600 V

Drain to Source Resistance89 mΩ

Drain to Source Voltage (Vdss)600 V

Fall Time5 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance3.33 nF

Max Dual Supply Voltage600 V

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation278 W

Min Operating Temperature-55 °C

Number of Channels1

On-State Resistance99 mΩ

Package Quantity500

Power Dissipation278 W

Rds On Max99 mΩ

Rise Time10 ns

Schedule B8541290080

Threshold Voltage3.5 V

Turn-Off Delay Time50 ns

Turn-On Delay Time20 ns

Dimensions

Height20.7 mm

Inventory History

3 month trend: +66.08%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Documents

Download datasheets and manufacturer documentation for Infineon IPP60R099P6XKSA1.

element14 APAC

Datasheet18 pages0 years ago

Inventory History

3 month trend:

+66.08%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPP60R099P6XKSA1.

Related Parts

Descriptions

Descriptions of Infineon IPP60R099P6XKSA1 provided by its distributors.

Single N-Channel 600 V 99 mOhm 70 nC CoolMOS Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 650V 37.9A 3-Pin TO-220 Tube - Rail/Tube

NewYang

Mosfet, N-Ch, 600V, 37.9A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPP60R099P6XKSA1

Newark

Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

Infineon SCT

Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Infineon