Infineon IPD60R400CEATMA1
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD60R400CEATMA1 | 708 | 6d | ||||||||||
| 461031-IPD60R400CEATMA1 | 112,000 | 60 | 22h | |||||||||
| 6923958-IPD60R400CEATMA1 | 96,492 | 1d | ||||||||||
| IPD60R400CEATMA1 | 43,624 | 10 | 1d | |||||||||
| IPD60R400CEATMA1 | 1,025 | 1d |
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Weight3.949996 g
Technical
Continuous Drain Current (ID)10.3 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-40 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation112 W
Rds On Max400 mΩ
Rise Time9 ns
Turn-Off Delay Time56 ns
Turn-On Delay Time11 ns
Dimensions
Height2.55 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.539
Stock
305,945
1,278,772
Authorized Distributors
0
11
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
-
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
10.3 A
-
Threshold Voltage
-
-
Rds On Max
400 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
112 W
83 W
Input Capacitance
700 pF
-
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPD60R400CEATMA1.
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Descriptions
Descriptions of Infineon IPD60R400CEATMA1 provided by its distributors.
Single N-Channel 600 V 400 mOhm 32 nC CoolMOS Power Mosfet - TO-252-3
Trans MOSFET N-CH 600V 10.3A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Weight3.949996 g
Technical
Continuous Drain Current (ID)10.3 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Operating Temperature-40 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation112 W
Rds On Max400 mΩ
Rise Time9 ns
Turn-Off Delay Time56 ns
Turn-On Delay Time11 ns
Dimensions
Height2.55 mm