Infineon IPD50R520CPATMA1

MOSFET Transistor, N Channel, 7.1 A, 550 V, 520 mohm, 10 V, 3 V
NRND

Technical Specifications

Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)7.1 A
Drain to Source Breakdown Voltage550 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
On-State Resistance520 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation66 W
Rds On Max520 mΩ
Rise Time14 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPD50R520CPATMA1.

TME
Datasheet10 pages13 years ago
element14 APAC
Datasheet10 pages16 years ago
Farnell
Datasheet6 pages15 years ago

Inventory History

3 month trend:
+0.00%

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPD50R520CPATMA1.

Related Parts

Descriptions

Descriptions of Infineon IPD50R520CPATMA1 provided by its distributors.

MOSFET Transistor, N Channel, 7.1 A, 550 V, 520 mohm, 10 V, 3 V
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.1A; Drain Source Voltage Vds:550V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.1A; Package / Case:TO-252; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPD50R520CP
  • SP001117706

Technical Specifications

Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)7.1 A
Drain to Source Breakdown Voltage550 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
On-State Resistance520 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation66 W
Rds On Max520 mΩ
Rise Time14 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPD50R520CPATMA1.

TME
Datasheet10 pages13 years ago
element14 APAC
Datasheet10 pages16 years ago
Farnell
Datasheet6 pages15 years ago

Compliance

Environmental Classification
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements