Infineon IPB60R060P7ATMA1
Production
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-IPB60R060P7ATMA1 | 3,575 | 1 | Tape & Reel | 2d | ||||||||
| IPB60R060P7ATMA1 | 150 | 2 | 11h | |||||||||
| IPB60R060P7ATMA1 | 150 | 1 | Cut Tape | 11h | ||||||||
| IPB60R060P7ATMA1CT-ND | 2,859 | 1 | Cut Tape | 1d | ||||||||
| TMOS1975 | 1,004 | 1K | 1d |
Technical Specifications
Technical
Continuous Drain Current (ID)48 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance49 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.895 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance60 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation164 W
Schedule B8541290080
Turn-Off Delay Time79 ns
Turn-On Delay Time23 ns
Dimensions
Height4.7 mm
Inventory History
3 month trend: +78.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPB60R060P7ATMA1.
Descriptions
Descriptions of Infineon IPB60R060P7ATMA1 provided by its distributors.
Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK
Trans MOSFET N-CH 600V 48A 3-Pin(2+Tab) D2PAK T/R
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 600V, 48A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:48A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +78.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Technical
Continuous Drain Current (ID)48 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance49 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.895 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance60 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation164 W
Schedule B8541290080
Turn-Off Delay Time79 ns
Turn-On Delay Time23 ns
Dimensions
Height4.7 mm