Infineon IPB042N10N3GATMA1

Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Production
In Stock

Price and Stock

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Non-Authorized Stocking Distributors
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Technical Specifications

Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation214 W
Rise Time59 ns
Schedule B8541290080
Turn-Off Delay Time48 ns
Turn-On Delay Time27 ns
Dimensions
Height4.7 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPB042N10N3GATMA1.

element14 APAC
Datasheet11 pages13 years ago
Infineon SCT
Datasheet10 pages0 years ago

Inventory History

3 month trend:
+5.39%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPB042N10N3GATMA1.

Related Parts

Descriptions

Descriptions of Infineon IPB042N10N3GATMA1 provided by its distributors.

Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
Infineon SCT
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPB042N10N3 G
  • IPB042N10N3 GATMA1
  • IPB042N10N3-G
  • IPB042N10N3G
  • SP000446880

Technical Specifications

Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Dual Supply Voltage100 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation214 W
Rise Time59 ns
Schedule B8541290080
Turn-Off Delay Time48 ns
Turn-On Delay Time27 ns
Dimensions
Height4.7 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPB042N10N3GATMA1.

element14 APAC
Datasheet11 pages13 years ago
Infineon SCT
Datasheet10 pages0 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
RoHSCompliant
Compliance Statements