Infineon IPB019N06L3GATMA1

Name: Infineon IPB019N06L3GATMA1
Brand: Infineon
SKU: IPB019N06L3GATMA1
Price: 3.61 USD
Availability: InStock

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

Production

Manufacturer Page Datasheet

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser	2	726-IPB019N06L3GATMA	6,258	1	Tape & Reel	3.610	3.030	2.450	1.710	1.690	1d
Verical		IPB019N06L3GATMA1	1,000	11				2.850	2.125	2.125	1d
DigiKey	3	IPB019N06L3GATMA1CT-ND	7,726	1	Cut Tape	3.620	3.039	2.459	2.186	2.186	1d
TME		IPB019N06L3GATMA1	1,017	1		2.119*	1.980*	1.702*	1.702*	1.702*	1d
Chip One Stop		C1S322000194016	1,000	1	Cut Tape	2.630	2.420	2.280	1.700	1.700	11h

Technical Specifications

Physical

Case/PackageTO-263

MountSurface Mount

Number of Pins3

Technical

Continuous Drain Current (ID)120 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance1.6 mΩ

Drain to Source Voltage (Vdss)60 V

Fall Time38 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance21 nF

Max Dual Supply Voltage60 V

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation250 W

Manufacturer Package IdentifierPG-TO-263-3

Min Operating Temperature-55 °C

Number of Channels1

On-State Resistance1.9 mΩ

Package Quantity1000

PackagingTape & Reel

Power Dissipation250 W

Rise Time79 ns

Schedule B8541290080

Threshold Voltage1.7 V

Turn-Off Delay Time131 ns

Turn-On Delay Time35 ns

Dimensions

Height4.57 mm

Inventory History

3 month trend: +3.18%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for Infineon IPB019N06L3GATMA1.

Factory Futures

Datasheet9 pages13 years ago

Inventory History

3 month trend:

+3.18%

Alternate Parts

This Part

Alternate Parts

InfineonIPB019N06L3GATMA1

NexperiaPSMN1R7-60BS,118

Price @ 1000

$ 1.785

$ 1.655

Stock

121,058

223,775

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

1.7 V

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

250 W

Input Capacitance

21 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPB019N06L3GATMA1.

Related Parts

Descriptions

Descriptions of Infineon IPB019N06L3GATMA1 provided by its distributors.

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

Single N-Channel 60 V 1.9 mOhm 166 nC OptiMOS Power Mosfet - D2PAK

Future Electronics

MOSFET, N CH, 60V, 120A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;

Farnell

Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS

Infineon SCT

OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Infineon