Infineon IPB017N08N5ATMA1
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-IPB017N08N5 | 336 | 1 | Tape & Reel | 16h | ||||||||
| IPB017N08N5ATMA1 | 145 | 1 | Cut Tape | 1d | ||||||||
| IPB017N08N5ATMA1 | 145 | 2 | 1d | |||||||||
| IPB017N08N5ATMA1CT-ND | 1,342 | 1 | Cut Tape | 1d | ||||||||
| 13AC9021 | 749 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.5 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance1.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation375 W
Rds On Max1.7 mΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time102 ns
Turn-On Delay Time40 ns
Dimensions
Height4.7 mm
Inventory History
3 month trend: -5.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPB017N08N5ATMA1.
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Infineon IPB020N10N5ATMA1
IPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3
Descriptions
Descriptions of Infineon IPB017N08N5ATMA1 provided by its distributors.
Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R
MOSFET, N-CH, 80V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -5.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.5 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance1.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation375 W
Rds On Max1.7 mΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time102 ns
Turn-On Delay Time40 ns
Dimensions
Height4.7 mm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
RoHSCompliant
Compliance Statements