Infineon IPA90R340C3XKSA2
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-IPA90R340C3XKSA2 | 918 | 1 | Tube | 1d | ||||||||
| IPA90R340C3XKSA2 | 810 | 1d | ||||||||||
| IPA90R340C3XKSA2 | 30,000 | 50 | 4d | |||||||||
| IPA90R340C3XKSA2 | 450 | 1 | 1d | |||||||||
| IPA90R340C3XKSA2 | 500 | 50 | 21h |
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)900 V
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Max Dual Supply Voltage900 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance340 mΩ
Package Quantity500
Power Dissipation35 W
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPA90R340C3XKSA2.
Related Parts
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N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP package
Descriptions
Descriptions of Infineon IPA90R340C3XKSA2 provided by its distributors.
Single N-Channel 900 V 340 mOhm 94 nC CoolMOS Power Mosfet - TO-220-3-FP
Power Transistor MOSFET N-Channel Enhancement 900V 15A 3-Pin TO-220FP
Avnet Japan
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:900V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:15A; Package / Case:TO-220; Power Dissipation Pd:35W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)900 V
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Max Dual Supply Voltage900 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance340 mΩ
Package Quantity500
Power Dissipation35 W
Rise Time20 ns
Schedule B8541290080
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements