Infineon IPA65R660CFD

Transistor MOSFET N-CH 700V 6A 3-Pin TO-220FP Tube
Production

Price and Stock

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220-3
Number of Pins3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage700 V
Drain to Source Resistance660 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance615 pF
Max Operating Temperature150 °C
Max Power Dissipation27.8 W
Min Operating Temperature-55 °C
On-State Resistance660 mΩ
Package Quantity500
Power Dissipation28 W
Rds On Max660 mΩ
Rise Time8 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time9 ns
Dimensions
Height16.15 mm
Length10.65 mm
Width4.85 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPA65R660CFD.

TME
Datasheet21 pages12 years ago
_legacy Avnet
Datasheet21 pages12 years ago

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPA65R660CFD.

Related Parts

Descriptions

Descriptions of Infineon IPA65R660CFD provided by its distributors.

Transistor MOSFET N-CH 700V 6A 3-Pin TO-220FP Tube
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPA65R660CFDXKSA1
  • SP000838284

Technical Specifications

Physical
Case/PackageTO-220-3
Number of Pins3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage700 V
Drain to Source Resistance660 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance615 pF
Max Operating Temperature150 °C
Max Power Dissipation27.8 W
Min Operating Temperature-55 °C
On-State Resistance660 mΩ
Package Quantity500
Power Dissipation28 W
Rds On Max660 mΩ
Rise Time8 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time9 ns
Dimensions
Height16.15 mm
Length10.65 mm
Width4.85 mm

Documents

Download datasheets and manufacturer documentation for Infineon IPA65R660CFD.

TME
Datasheet21 pages12 years ago
_legacy Avnet
Datasheet21 pages12 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
RoHSCompliant
Compliance Statements