Infineon IKQ75N120CH3XKSA1

1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Igbt, 1.2Kv, 150A, 938W, To-247; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:938W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKQ75N120CH3XKSA1

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter