Infineon IGT60R190D1SATMA1

IGT60R190D1S: 600 V 12.5A CoolGaN™ Enhancement-Mode Power Transistor-PG-HSOF-8-3
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Technical Specifications

Technical
Continuous Drain Current (ID)12.5 A
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)-10 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Manufacturer Package IdentifierPG-HSOF-8
Min Operating Temperature-55 °C
Number of Channels1
Package Quantity2000
PackagingTape & Reel
Power Dissipation55.5 W
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time11 ns
Dimensions
Height2.4 mm

Documents

Download datasheets and manufacturer documentation for Infineon IGT60R190D1SATMA1.

Future Electronics
Datasheet17 pages1 year ago
TME
Datasheet17 pages5 years ago

Inventory History

3 month trend:
-38.46%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IGT60R190D1SATMA1.

Descriptions

Descriptions of Infineon IGT60R190D1SATMA1 provided by its distributors.

IGT60R190D1S: 600 V 12.5A CoolGaN™ Enhancement-Mode Power Transistor-PG-HSOF-8-3
Mosfet, N-Ch, 600V, 12.5A, 55.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes |Infineon IGT60R190D1SATMA1
Power Field-Effect Transistor, 12.5A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET

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Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IGT60R190D1S
  • SP001701702

Technical Specifications

Technical
Continuous Drain Current (ID)12.5 A
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)-10 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Manufacturer Package IdentifierPG-HSOF-8
Min Operating Temperature-55 °C
Number of Channels1
Package Quantity2000
PackagingTape & Reel
Power Dissipation55.5 W
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time11 ns
Dimensions
Height2.4 mm

Documents

Download datasheets and manufacturer documentation for Infineon IGT60R190D1SATMA1.

Future Electronics
Datasheet17 pages1 year ago
TME
Datasheet17 pages5 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements