GaN Systems GS66516T-E02-MR

Name: GaN Systems GS66516T-E02-MR
Brand: GaN Systems
SKU: GS66516T-E02-MR

Gan Power Transistor

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Technical Specifications

Technical

Continuous Drain Current (ID)60 A

Drain to Source Breakdown Voltage650 V

Drain to Source Resistance25 mΩ

Drain to Source Voltage (Vdss)650 V

Gate to Source Voltage (Vgs)7 V

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Manufacturer Package IdentifierGS66516T-E02-MR

Min Operating Temperature-55 °C

Number of Channels1

Threshold Voltage1.3 V

Turn-Off Delay Time14.9 ns

Turn-On Delay Time4.6 ns

Dimensions

Height580 µm

Inventory History

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CAD Models

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Alternate Parts

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Documents

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Upverter

Datasheet17 pages6 years ago

Engineering Resources

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Descriptions

Descriptions of GaN Systems GS66516T-E02-MR provided by its distributors.

GAN POWER TRANSISTOR

Richardson RFPD

Manufacturer Aliases

GaN Systems has several brands around the world that distributors may use as alternate names. GaN Systems may also be known as the following names:

GAN SYSTEMS INC
GaNPower