Diodes Inc. FZT651TA

FZT651 Series 3 A 60 V NPN Bipolar (BJT) Transistor SMT - SOT-223

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage430 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current3 A
Current3 A
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency175 MHz
Gain Bandwidth Product175 MHz
hFE Min100
Max Breakdown Voltage60 V
Max Collector Current3 A
Max Frequency175 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency175 MHz
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm

Documents

Download datasheets and manufacturer documentation for Diodes Inc. FZT651TA.

Newark
Datasheet7 pages9 years ago
Datasheet2 pages17 years ago
Datasheet2 pages17 years ago
Diodes Inc SCT
Technical Drawing5 pages7 years ago
Datasheet7 pages5 years ago
TME
Datasheet7 pages9 years ago
Future Electronics
Datasheet7 pages5 years ago
iiiC
Datasheet7 pages11 years ago
Farnell
Datasheet2 pages26 years ago

Inventory History

3 month trend:
+43.29%

Alternate Parts

Price @ 1000
$ 0.26
$ 0.291
$ 0.243
$ 0.323
Stock
6,296,862
429,588
594,825
225,095
Authorized Distributors
11
9
10
7
Mount
Surface Mount
Surface Mount
Surface Mount
-
Case/Package
SOT-223
SOT-223
TO-261-4
-
Polarity
NPN
NPN
-
-
Collector Emitter Breakdown Voltage
60 V
60 V
60 V
-
Max Collector Current
3 A
3 A
3 A
-
Transition Frequency
175 MHz
175 MHz
175 MHz
-
Collector Emitter Saturation Voltage
430 mV
430 mV
-
-
hFE Min
100
-
-
-
Power Dissipation
2 W
2 W
-
-

Engineering Resources

View Evaluation kits and Reference designs for Diodes Inc. FZT651TA.

Related Parts

Descriptions

Descriptions of Diodes Inc. FZT651TA provided by its distributors.

FZT651 Series 3 A 60 V NPN Bipolar (BJT) Transistor SMT - SOT-223
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
60V 2W 100@500mA,2V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 60V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Transistor NPN FZT651/FZT651TA ZETEX Ampere=3 V=60 SOT89
SMT NPN transistor, FZT651 3A Ic 2Vce | Diodes Inc FZT651TA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:175MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:0.5A; Full Power Rating Temperature:25°C; Max Current Ic:3A; Max Current Ic Continuous a:3A; Max Power Dissipation Ptot:2W; Max Voltage Vce Sat:0.3V; Min Gain Bandwidth ft:140MHz; Min Hfe:100; No. of Transistors:1; Power Dissipation:2W; Pulsed Current Icm:6A; Reel Quantity:1000; SMD Marking:FZT651; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:80V

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH

Part Number Aliases

This part may be known by these alternate part numbers:

  • FZT651 TA
  • FZT651/TA

Technical Specifications

Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage430 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current3 A
Current3 A
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency175 MHz
Gain Bandwidth Product175 MHz
hFE Min100
Max Breakdown Voltage60 V
Max Collector Current3 A
Max Frequency175 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency175 MHz
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm

Documents

Download datasheets and manufacturer documentation for Diodes Inc. FZT651TA.

Newark
Datasheet7 pages9 years ago
Datasheet2 pages17 years ago
Datasheet2 pages17 years ago
Diodes Inc SCT
Technical Drawing5 pages7 years ago
Datasheet7 pages5 years ago
TME
Datasheet7 pages9 years ago
Future Electronics
Datasheet7 pages5 years ago
iiiC
Datasheet7 pages11 years ago
Farnell
Datasheet2 pages26 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement127 pages10 years ago