Texas Instruments TLC080AIDR

Single Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 8-SOIC -40 to 125
$ 1.25
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Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)

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Pièces détachées

Texas InstrumentsTLC080CDR
Single, 16-V, 10-MHz, In to V- op amp with shutdown functionality 8-SOIC 0 to 70
Texas InstrumentsTLC070CDR
Single, 16-V, 10-MHz operational amplifier with shutdown functionality 8-SOIC 0 to 70
Texas InstrumentsTLC070IDR
Single, 16-V, 10-MHz operational amplifier with shutdown functionality 8-SOIC -40 to 125

Descriptions

Descriptions de Texas Instruments TLC080AIDR fournies par ses distributeurs.

Single Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 8-SOIC -40 to 125
IC OPAMP GP 1 CIRCUIT 8SOIC / General Purpose Amplifier 1 Circuit 8-SOIC
Op Amp Single Wideband Amplifier ±8V/16V 8-Pin SOIC T/R
Single channel 2pA 19V/us 10MHz 1400uV SOIC-8 Operational Amplifier ROHS
Single, 16-V, 10-MHz, 1.4-mV offset voltage, In to V- op amp with shutdown functionality 8-SOIC -40 to 125
Operational Amplifier (Op-Amp) IC; No. of Amplifiers:1; Gain Bandwidth -3db:10MHz; Slew Rate:16V/µs; Supply Voltage Min:4.5V; Supply Voltage Max:16V; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Bias Current:50pA ;RoHS Compliant: Yes
The first members of TI's new Bi Mos general-purpose operational amplifier family are the TLC08x. The BiMOSfamily concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16V across commercial (0oC to 70oC) and an extended industrial temperature range (-40oC to 125oC), Bi Mos suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD(TM) packages and shutdown modes, enable higher levels of performance in a variety of applications. Developed in TI's patented LBC3 Bi CMOS process, the new Bi Mos amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include abandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/\Delta Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive +-50-mA loads comfortably from anultrasmall-footprint MSOP Power Pad package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.

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