TRANSISTOR, DARLINGTON SOT-227; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 125V; DC Collector Current: 120A; DC Current Gain hFE: 1200hFE; Transistor Case Style: SOT-227; MSL: -; SVHC: No SVHC (17-Dec-2015);

Farnell

DARLINGTON TRANSISTOR, SOT-227; Transistor Type:Bipolar Darlington; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:125V; Current Ic Continuous a Max:120A; Voltage, Vce Sat Max:1.5V; Power Dissipation:175W; Min ;RoHS Compliant: Yes

Newark

DARLINGTON TRANSISTOR, SOT-227; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Power Dissipation Pd:175W; DC Collector Current:120A; DC Current Gain hFE:1200; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Av Current Ic:120A; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:120A; Current Ib:2A; Current Ic Continuous a Max:120A; Current Ic hFE:120A; External Depth:38.2mm; External Length / Height:12.2mm; External Width:25.4mm; Hfe Min:1200; Hfe Typ:1200; No. of Transistors:1; Package / Case:ISOTOP; Pin Configuration:b; Power Dissipation Pd:175W; Power Dissipation Ptot Max:175W; Pulsed Current Icm:128A; Termination Type:Screw; Transistor Type:Darlington; Voltage Vcbo:150V

element14 APAC

Images

Farnell

Lanka Micro

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Alias du fabricant

STMicroelectronics possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. STMicroelectronics peut également être connu sous les noms suivants :

ST MICRO
STM
SGS
SGS THOMSON
INMOS
STMICROE
STMICROEL
STMICR
ST MIC
ST MICROELECTRONIC
SGS THOMPSON
SESCOSEM
STMICROELECT
ST8
STMICROELECTRON
WAFERSCALE
SGS-ATES
ST MICROELECTRONICS SEMI
ST/SGS
ST MICROELECTRO
SGST
THOMS
STMICROELE
WAFERSCALE INTEGRATION INC
SGS-Thomson Microelectronics
ST Microeletronics

Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

ESM2012DV.

Historique des stocks

Tendance de l'historique des stocks indisponible

Modèles CAO

0 modèles disponibles

Pièces de rechange

0 composant disponible

Spécifications techniques

Physical

Case/PackageModule

Contact PlatingNickel

MountChassis Mount, Screw

Number of Pins4

Number of Terminals4

Technical

Collector Emitter Breakdown Voltage120 V

Collector Emitter Saturation Voltage2 V

Collector Emitter Voltage (VCEO)125 V

Current Rating120 A

Emitter Base Voltage (VEBO)7 V

Fall Time300 ns

hFE Min1200

Max Collector Current120 A

Max Operating Temperature150 °C

Max Power Dissipation175 W

Min Operating Temperature-55 °C

Number of Elements1

PolarityNPN

Power Dissipation175 W

Voltage Rating (DC)120 V

Dimensions

Width25.4 mm

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour STMicroelectronics ESM2012DV.

IHS

Datasheet8 pagesIl y a 15 ans

Farnell

Future Electronics

iiiC

Newark

Conformité

Classification environnementale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCAffected

RoHSCompliant