onsemi PN3563

RF SMALL SIGNAL TRANSISTOR / RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Hole TO-92-3
$ 0.044
Obsolete
Page du fabricantFiche technique

Prix et stock

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DistributorSKUMinPkg
Verical
4
PN356312 0006834
Rochester ElectronicsPN356356 870
17h
AvnetPN3563010K
20h
Component Stockers USAPN356339 510
1d
Win SourceWS-PN35633 700480
18h

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi PN3563.

IHS

Datasheet2 pagesIl y a 0 an
Datasheet0 pageIl y a 0 an

Farnell

Fairchild Semiconductor

element14 APAC

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1979-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23

Pièces détachées

onsemi2N3663
Trans GP BJT NPN 12V 0.05A 3-Pin TO-92 Bulk
Détails
onsemiSS9018GBU
SS9018 Series 15 V 72 A Through Hole NPN Epitaxial Silicon Transistor - TO-92-3
Détails
onsemiSS9018FBU
Trans RF BJT NPN 15V 0.05A 3-Pin TO-92 Bulk
Détails
onsemiKSC1730YBU
RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3
Détails
onsemiKSC388YBU
Bulk Through Hole NPN KSC388 Bipolar (BJT) Transistor 20 @ 12.5mA 12.5V 50mA 300mW 300MHz
Détails
onsemi2N5772
Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 30 @ 30mA 400mV 300mA 350mW 350MHz
Détails

Descriptions

Descriptions de onsemi PN3563 fournies par ses distributeurs.

RF SMALL SIGNAL TRANSISTOR / RF Transistor NPN 15V 50mA 1.5GHz 350mW Through Hole TO-92-3
Win Source
Trans GP BJT NPN 15V 0.05A 3-Pin TO-92 Bulk
Verical
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
IHS
NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.
Fairchild Semiconductor
Transistor; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):20; Package/Case:3-TO-92; C-E Breakdown Voltage:15V; DC Collector Current:0.05A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Newark
TRANSISTOR, N CH 30MA TO-92; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Continuous Collector Current Ic:8mA; Gain Bandwidth ft Typ:1.5GHz; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92
element14 APAC

Images

Farnell
element14 APAC
element14
Rochester Electronics

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  • PN3563..