onsemi NDS8934

Transistor MOSFET Array Dual P-Channel 20V 3.8A 8-Pin SOIC N T/R
$ 0.678
Obsolete
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Datasheet7 pagesIl y a 28 ans
Datasheet0 pageIl y a 0 an

Fairchild Semiconductor

iiiC

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

Pièces détachées

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InfineonIRF7307PBF
Dual N/P-Channel 20 V 0.05/0.09 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
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Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
onsemiFDS9933A
Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.8A, 75mΩ
Trans MOSFET P-CH 20V 3.86A 8-Pin SOIC N T/R

Descriptions

Descriptions de onsemi NDS8934 fournies par ses distributeurs.

Transistor MOSFET Array Dual P-Channel 20V 3.8A 8-Pin SOIC N T/R
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 30nC @ 4.5V 3.8A 900mW 30ns
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs Dual P-Ch FET Enhancement Mode
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Alias du fabricant

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  • onsemi / Fairchild
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  • ON Semiconductor Corporation
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  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd