onsemi NDC7001C
$ 0.157
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : +16.79%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles onsemi NDC7001C, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | 3D | Télécharger |
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Chaîne d'approvisionnement
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
Diodes Inc.DMN61D8LVT-7
MOSFET 2N-CH 60V 0.63A TSOT26 / Mosfet Array 60V 630mA 820mW Surface Mount TSOT-26
onsemiFDC5661N-F085
60V, 4A, 50M Ohm, N-Channel Logic Level Powertrench Mosfet/Tape Reel |Onsemi FDC5661N_F085
Diodes Inc.ZXMP6A17E6QTA
ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6
Descriptions
Descriptions de onsemi NDC7001C fournies par ses distributeurs.
Trans MOSFET N/P-CH 60V 0.51A/0.34A 6-Pin TSOT-23 T/R / MOSFET N/P-CH 60V SSOT6
Dual N & P Channel Enhancement Mode Field Effect Transistor 60V
Dual N & P-Channel 60 V 2 Ohm SMT Field Effect Transistor - SSOT-6
Small Signal Field-Effect Transistor, 0.51A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.
MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:340mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:700mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Cont Current Id P Channel:340mA; Current Id Max:510mA; Current Temperature:25°C; External Depth:2.92mm; External Length / Height:1.02mm; External Width:2.85mm; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Max:2ohm; On State Resistance N Channel Max:2ohm; On State Resistance P Channel Max:5ohm; Package / Case:SuperSOT-6; Power Dissipation P Channel 2:700mW; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Pulse Current Idm:1A; SMD Marking:NDC7001C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:50V; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +16.79%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)510 mA
Current Rating350 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance20 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max2 Ω
Resistance2 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time8 ns
Turn-On Delay Time2.8 ns
Dimensions
Height900 µm
Length3 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité