This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Fairchild Semiconductor

Small Signal Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):10000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:10000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:300mA; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:MPSA63; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:b; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:30V

element14 APAC

Images

Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

MPSA 63

Historique des stocks

Tendance de l'historique des stocks indisponible

Modèles CAO

Télécharger le symbole, l’empreinte et le 3D STEP

Pièces de rechange

0 composant disponible

Spécifications techniques

Physical

Case/PackageTO-92

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight201 mg

Technical

Collector Base Voltage (VCBO)-30 V

Collector Emitter Breakdown Voltage30 V

Collector Emitter Saturation Voltage1.5 V

Collector Emitter Voltage (VCEO)30 V

Continuous Collector Current-500 mA

Current Rating-1.2 A

Element ConfigurationSingle

Emitter Base Voltage (VEBO)-10 V

hFE Min5000

Max Breakdown Voltage30 V

Max Collector Current300 mA

Max Operating Temperature150 °C

Max Power Dissipation625 mW

Min Operating Temperature-55 °C

Number of Elements1

PackagingBulk

PolarityPNP

Power Dissipation625 mW

TerminationThrough Hole

Transition Frequency100 MHz

Voltage Rating (DC)-30 V

Dimensions

Height5.33 mm

Length5.2 mm

Width4.19 mm

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MPSA63.

IHS

Datasheet4 pagesIl y a 16 ans

Datasheet1 pageIl y a 0 an

Datasheet2 pagesIl y a 25 ans

Datasheet0 pageIl y a 0 an

Datasheet4 pagesIl y a 0 an

onsemi

iiiC

Farnell

Fairchild Semiconductor

Conformité

Classification environnementale

China RoHSNon-Compliant

REACH SVHCAffected

RoHSCompliant

Déclarations de conformité

Rohs Statement3 pagesIl y a 5 ans

Reach Statement8 pagesIl y a 11 ans

Rohs Statement1 pageIl y a 13 ans

Rohs Statement1 pageIl y a 14 ans

Reach Statement2 pagesIl y a 13 ans

Rohs StatementN/AN/A