onsemi FQD4N50TM

Trans MOSFET N-CH 500V 2.6A 3-Pin(2+Tab) DPAK T/R
$ 0.395
Obsolete
Page du fabricantFiche technique

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DistributorSKUMinPkg
Verical
2
FQD4N50TM1 980789
Rochester ElectronicsFQD4N50TM3 035
43m
Win SourceWS-FQD4N50TM6 360135
2h
Worldway ElectronicsFQD4N50TM13 5117Bulk
27m
AnlinkdaFQD4N50TM60 612
9h

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQD4N50TM.

IHS

Datasheet9 pagesIl y a 25 ans

Fairchild Semiconductor

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

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Descriptions

Descriptions de onsemi FQD4N50TM fournies par ses distributeurs.

Trans MOSFET N-CH 500V 2.6A 3-Pin(2+Tab) DPAK T/R
Verical
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
Power Field-Effect Transistor, 2.6A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Fairchild Semiconductor

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Rochester Electronics

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