onsemi FQD3P50TM-F085
EOL
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FQD3P50TM_F085 | 0 | 2500 | Tape & Reel | ||||||||
| Farnell | FQD3P50TM-F085 | 0 | 2500 | Tape & Reel | 10h | |||||||
| Microchip USA | FQD3P50TM-F085 | 2 157 | 3500 | Tray | 5h | |||||||
| Win Source | WS-FQD3P50TM_F085 | 20 | 18 | 12h | ||||||||
| Worldway Electronics | FQD3P50TM-F085 | 27 720 | 7 | Tape & Reel | 11h |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQD3P50TM-F085.
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-09
Lifecycle StatusEOL (Last Updated: 2 years ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 years ago)
Pièces détachées
onsemiFQD2N60CTF
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
VishayIRFR310PBF
MOSFET, Power;N-Ch;VDSS 400V;RDS(ON) 3.6 Ohms;ID 1.7A;TO-252AA;PD 25W;VGS +/-20V
Descriptions
Descriptions de onsemi FQD3P50TM-F085 fournies par ses distributeurs.
Trans MOSFET P-CH 500V 2.1A Automotive 3-Pin(2+Tab) DPAK T/R
2.1A, 500V, 4.9 Ohm, P-Ch Mosfet/Tape Reel |Onsemi FQD3P50TM_F085
P-Channel 500 V 4.9 O Surface Mount Power Mosfet - TO-252
500V P-Channel MOSFET, TO-252 3L (DPAK), 30000-TAPE REEL
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage-500 V
Drain to Source Resistance4.9 Ω
Drain to Source Voltage (Vdss)-500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.9 Ω
Resistance4.9 Ω
Rise Time56 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time12 ns
Dimensions
Height2.517 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQD3P50TM-F085.
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Déclarations de conformité