onsemi FQB5N50CTM
$ 0.742
EOL
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQB5N50CTM | 54 | 22h | |||||||||
| Farnell | FQB5N50CTM | 0 | 1 | Cut Tape | 22h | |||||||
| element14 APAC | FQB5N50CTM | 0 | 1 | Cut Tape | 11h | |||||||
| Component Stockers USA | FQB5N50CTM | 826 | >1wk | |||||||||
| Win Source | WS-FQB5N50CTM | 382 | 7 | 23h |
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQB5N50CTM.
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-01
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
Pièces détachées
STMicroelectronicsSTB5NK50ZT4
Mosfet Transistor, N Channel, 4.4 A, 500 V, 1.22 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
VishayIRF730ASTRLPBF
74W(Tc) 30V 4.5V@ 250¦ÌA 22nC@ 10 V 1N 400V 1¦¸@ 3.3A,10V 5.5A 600pF@25V D2PAK
STMicroelectronicsSTB6NK60ZT4
N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET
Descriptions
Descriptions de onsemi FQB5N50CTM fournies par ses distributeurs.
N-Channel Power MOSFET, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R
N-Channel 500 V 5 A 1.4 O Surface Mount QFET® Mosfet - TO-263
500 V, 5 A, 1.4 OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 500V, 5A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation73 W
Rds On Max1.4 Ω
Rise Time46 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)500 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQB5N50CTM.
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Déclarations de conformité