onsemi FGA6065ADF

Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
$ 2.34
Obsolete
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FGA6065ADF.

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onsemi

Fairchild Semiconductor

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Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-12-11
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

Pièces détachées

Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
STMicroelectronicsSTGWT80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STMicroelectronicsSTGW80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STMicroelectronicsSTGWA80H65DFB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
Trans IGBT Chip N-CH 650V 120A 395W 3-Pin(3+Tab) TO-247 Tube

Descriptions

Descriptions de onsemi FGA6065ADF fournies par ses distributeurs.

Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
IGBT, 650 V, 60 A Field Stop Trench
IGBT Transistors 650V FS Gen3 Trench IGBT
306W 120A 650V Trench Field Stop TO-3P-3 IGBTs ROHS
IGBT TRENCH/FS 650V 120A TO3PN
Insulated Gate Bipolar Transistor
FAST & ULTRAFAST RECOVERY RECTIFIERS;
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.

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