onsemi FFH15S60STU

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon
Obsolete
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Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FFH15S60STU.

IHS

Datasheet5 pagesIl y a 18 ans

Fairchild Semiconductor

Farnell

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2007-09-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-09-11
LTD Date2014-03-11

Pièces détachées

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-247
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247
Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2+Tab) TO-247 Rail
STMicroelectronicsSTTH30W02CW
Rectifier Diode, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247
STMicroelectronicsSTTH60W03CW
Rectifier Diode, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, TO-247
STMicroelectronicsSTPS30150CW
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-247

Descriptions

Descriptions de onsemi FFH15S60STU fournies par ses distributeurs.

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon
DIODE GEN PURP 600V 15A TO247-2
DIODE SWITCHING 600V 15A 2-PIN(2+TAB) TO-247
DIODE, RECTIFIER, 600V, 15A, TO-247; Diode Type:Ultrafast; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Forward Voltage VF Max:2.6V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:150A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:TO-247; No. of Pins:2; MSL:MSL 1 - Unlimited
The FFH15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

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