Transistor; Transistor Polarity:P Channe; Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:1.9W
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
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