onsemi FDN357N
$ 0.193
Production
Historique des stocks
Tendance sur 3 mois : +61.89%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles onsemi FDN357N, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | 3D | Télécharger | |
 Ultra Librarian | SymboleEmpreinte | Télécharger |
Le site partenaire s’ouvrira dans un nouvel onglet lorsque vous téléchargez ses modèles de CAO.
En téléchargeant des modèles de CAO depuis Octopart, vous acceptez nos conditions générales d’utilisation et notre politique de confidentialité.
Chaîne d'approvisionnement
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
InfineonBSS306NH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23
STMicroelectronicsSTR2P3LLH6
P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package
Diodes Inc.ZXMN3A01FTA
ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
Descriptions
Descriptions de onsemi FDN357N fournies par ses distributeurs.
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +61.89%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance235 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time12 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1.6 V
Turn-Off Delay Time12 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)30 V
Dimensions
Height1.12 mm
Length2.92 mm
Width3.05 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité