onsemi FDMS7570S

2.5W(Ta), 83W(Tc) 20V 3V@1mA 69nC@ 10V 1N 25V 1.95m¦¸@ 28A, 10V 28A, 49A 4.515nF@13V QFN 6mm*5mm*1.1mm
$ 0.493
Obsolete
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DistributorSKUMinPkg
Arrow ElectronicsFDMS7570S8351
VericalFDMS7570S83512
AvnetFDMS7570S3211786
9h
Rochester Electronics
2
FDMS7570S48 186
7h
Flip ElectronicsFDMS7570S12 321
6d

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMS7570S.

IHS

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Datasheet0 pageIl y a 0 an

element14 APAC

Newark

onsemi

Farnell

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Chaîne d'approvisionnement

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-08-01
LTD Date2022-02-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions de onsemi FDMS7570S fournies par ses distributeurs.

2.5W(Ta),83W(Tc) 20V 3V@1mA 69nC@ 10V 1N 25V 1.95m¦¸@ 28A,10V 28A,49A 4.515nF@13V QFN 6mm*5mm*1.1mm
Unikeyic (ICkey)
Power Field-Effect Transistor, 28A I(D), 25V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Farnell
The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor

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Rochester Electronics
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