onsemi FDMC86183

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 47 A, 12.8 mΩ
Obsolete
Fiche technique
Page du fabricant

Prix et stock

Voir tous les prix
Distributeur
SKU
Minimum
Emballage
Prix de gros
Microchip USA
FDMC86183
256
600
USD
1,736
1,736
>1wk
Win Source
WS-FDMC86183
70
35
USD
1,410
1,145
1,145
21m
YIC International
FDMC86183
1 500
USD
20,682
20,682
20,682
20,682
20,682
>1wk
Worldway Electronics
FDMC86183
6 236
7
USD
0,611
0,600
0,577
0,565
23h
IC Components Ltd.
FDMC86183
3 812
USD
20,680
20,680
20,680
20,680
20,680
1d

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMC86183.

onsemi

Datasheet8 pagesIl y a 3 ans
Datasheet0 pageIl y a 0 an
Datasheet0 pageIl y a 0 an
Datasheet0 pageIl y a 0 an

IHS

Fairchild Semiconductor

Chaîne d'approvisionnement

Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-02-03
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

Descriptions

Descriptions de onsemi FDMC86183 fournies par ses distributeurs.

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 47 A, 12.8 mΩ
onsemi
Transistor MOSFET N-CH 100V 47A 8-Pin PQFN T/R
Avnet
Power Field-Effect Transistor, 47A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
IHS
MOSFET, N-CH, 47A, 100V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs; Available until stocks are exhausted
Farnell
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Fairchild Semiconductor

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Farnell
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