MOSFET, PP CH, 20V, 3A, MICROFET2X2; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

Farnell

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

Fairchild Semiconductor

Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Historique des stocks

Tendance de l'historique des stocks indisponible

Modèles CAO

Télécharger le symbole, l’empreinte et le 3D STEP

Pièces de rechange

0 composant disponible

Spécifications techniques

Physical

MountSurface Mount

Number of Pins6

Number of Terminals6

Technical

Continuous Drain Current (ID)3 A

Drain to Source Breakdown Voltage20 V

Drain to Source Resistance120 mΩ

Drain to Source Voltage (Vds)20 V

Element ConfigurationDual

Fall Time11 ns

Gate to Source Voltage (Vgs)8 V

Input Capacitance435 pF

Max Operating Temperature150 °C

Max Power Dissipation1.4 W

Min Breakdown Voltage20 V

Min Operating Temperature-55 °C

Number of Elements2

Power Dissipation1.4 W

Rds On Max120 mΩ

Rise Time11 ns

Threshold Voltage-700 mV

Turn-Off Delay Time15 ns

Turn-On Delay Time9 ns

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMA1027PT.

IHS

Datasheet7 pagesIl y a 17 ans

Farnell

Fairchild Semiconductor

Conformité

Classification environnementale

Radiation HardeningNo

REACH SVHCUnaffected

RoHSCompliant

Déclarations de conformité

Reach Statement3 pagesIl y a 13 ans

Materials Sheet3 pagesIl y a 13 ans

Reach Statement8 pagesIl y a 11 ans

Rohs Statement1 pageIl y a 13 ans

Rohs Statement1 pageIl y a 14 ans

Reach Statement2 pagesIl y a 13 ans